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IRF3515S/L
Static @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
150
–––
––– V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
0.21
–––
V/°C
Reference to 25°C, I D = 1mA
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.045
?
V GS = 10V, I D = 25A
?
V GS(th)
I DSS
I GSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.5 V V DS = V GS , I D = 250μA
25 V DS = 150V, V GS = 0V
μA
250 V DS = 120V, V GS = 0V, T J = 150°C
100 V GS = 30V
nA
-100 V GS = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
––– I D = 25A
g fs
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
17
120
34
––– S V DS = 50V, I D = 25A
107 I D = 25A
23 nC V DS = 120V
65 V GS = 10V, See Fig. 6 and 13 ?
––– V DD = 75V
ns
––– R G = 2.5 ?
t f
Fall Time
–––
63
––– R D = 3.0 ? ,See Fig. 10
?
C iss
C oss
C rss
C oss
C oss
C oss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
2260
530
170
3330
230
280
––– V GS = 0V
––– V DS = 25V
––– pF ? = 1.0MHz, See Fig. 5
––– V GS = 0V, V DS = 1.0V, ? = 1.0MHz
––– V GS = 0V, V DS = 120V, ? = 1.0MHz
––– V GS = 0V, V DS = 0V to 120V ?
Avalanche Characteristics
Parameter
Typ.
Max.
Units
E AS
I AR
E AR
Single Pulse Avalanche Energy ?
Avalanche Current ?
Repetitive Avalanche Energy ?
–––
–––
–––
670
25
20
mJ
A
mJ
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
–––
–––
0.75
40
°C/W
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
––– –––
––– –––
41
164
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
Diode Forward Voltage
––– ––– 1.3 V T J = 25°C, I S = 25A, V GS = 0V
?
t rr
Q rr
t on
2
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– 200 300 ns T J = 25°C, I F = 25A
––– 1.6 2.4 μC di/dt = 100A/μs ?
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
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